Widerstand und Verfahren zur Herstellung

A resistor and method for making a resistor

Résistance et procédé de fabrication

Abstract

A polysilicon resistor (40) includes a field oxide layer (12) and a polysilicon layer (20) that covers a portion of field oxide layer (12). The polysilicon layer (20) possesses a predetermined electrical resistance value. Nitride/oxide stack (42) covers a predetermined portion of the polysilicon layer (20) and forms at least one exposed location of polysilicon layer (20) on which not to implant a dopant to achieve a predetermined resistance value. Silicide layer (34) covers exposed location.

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Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    EP-0418670-A2March 27, 1991National Semiconductor CorporationVerfahren zur Herstellung von BiMOS-Schaltungen mit hoher Leistung
    US-5236857-AAugust 17, 1993Texas Instruments IncorporatedResistor structure and process

NO-Patent Citations (1)

    Title
    IBM TECHNICAL DISCLOSURE BULLETIN, JUNE 1984, USA, vol. 27, no. 1A, ISSN 0018-8689, pages 195-197, CHOI M S ET AL 'Polysilicon resistor process'

Cited By (2)

    Publication numberPublication dateAssigneeTitle
    EP-1422744-A2May 26, 2004Texas Instruments Inc.Method of manufacturing integrated circuit resistors in a CMOS process
    EP-1422744-A3September 06, 2006Texas Instruments Inc.Procédé de fabrication d'une structure de résistance pour circuit intégré par un procédé pour la fabricaion de CMOS