Neutron detector with wafer-to-wafer bonding

利用晶圆间结合的中子检测器

Abstract

一种制造中子检测器的方法包括:通过至少在基板上形成氧化物层、在氧化物层上形成活性半导体层并且在活性半导体层上形成互连层而形成第一晶圆;形成从互连层通过活性半导体层和氧化物层延伸的至少一条导电径路;在互连层和第二晶圆之间形成电路转移结合部;在形成电路转移结合部之后移除第一晶圆的基板;在移除第一晶圆的基板之后在氧化物层上沉积结合垫,其中结合垫被电连接到导电径路;在移除第一晶圆的基板之后在氧化物层上沉积阻挡层;和,在沉积阻挡层之后在阻挡层上沉积中子转换层。
A method of manufacturing a neutron detector comprises forming a first wafer by at least forming an oxide layer on a substrate, forming an active semiconductor layer on the oxide layer, and forming an interconnect layer on the active semiconductor layer, forming at least one electrically conductive pathway extending from the interconnect layer through the active semiconductor layer and the oxide layer, forming a circuit transfer bond between the interconnect layer and a second wafer, removing the substrate of the first wafer after forming the circuit transfer bond, depositing a bond pad on the oxide layer after removing the substrate of the first wafer, wherein the bond pad is electrically connected to the electrically conductive pathway, depositing a barrier layer on the oxide layer after removing the substrate of the first wafer, and depositing a neutron conversion layer on the barrier layer after depositing the barrier layer.

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