Photodiode and manufacturing method thereof

一种光电二极管及其制作方法

Abstract

本发明的实施例公开了一种光电二极管及其制作方法,涉及光电技术领域,能够降低能量的损耗。该光电二极管包括:位于底层的衬底;覆盖衬底的下包层凸台,下包层凸台在入射波方向的末端的宽度宽于入射波方向始端的宽度,且下包层凸台在入射波方向的末端的两侧边平行,下包层凸台在入射波方向的始端的两侧边平行;覆盖下包层凸台的入射波导芯层;覆盖入射波导芯层的上包层;位于上包层上方的光匹配层,光匹配层包括:光匹配层前端和光匹配层后端,其中光匹配层前端包含有沿入射波方向延伸的至少一条空气缝,且空气缝将光匹配层前端分割成间隔设置的特征单元;位于光匹配层后端中部上方的雪崩光电二极管。本发明的实施例应用于光电二极管制造。
The embodiment of the invention discloses a photodiode and a manufacturing method thereof, relating to the field of opto-electrical technology, wherein the photodiode is capable of reducing the energy loss. The photodiode comprises a substrate positioned on a bottom layer, a lower cladding layer boss covering the substrate, an incident wave core guiding layer covering the lower cladding layer boss, an upper cladding layer covering the incident wave core guiding layer, an optical matching layer positioned above the upper cladding layer and an avalanche photodiode positioned above the middle part of the back end of the optical matching layer, wherein the width of the lower cladding layer boss at the tail end in the incident wave direction is wider than that of the beginning end in the incident wave direction, both sides of the lower cladding layer boss at the tail end in the incident wave direction are parallel, and both sides of the lower cladding layer boss at the beginning end in the incident wave direction are parallel; and the optical matching layer comprises an optical matching layer front end and an optical matching layer back end, wherein the optical matching layer front end comprises at least one air seam extended along the incident wave direction, and the optical matching layer front end is divided into characteristic units partitioned by the air seams. The embodiment of the invention is applied to manufacturing the photodiode.

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Cited By (5)

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    CN-103489953-AJanuary 01, 2014中国科学院半导体研究所APD with dual-step evanescent field coupling function
    CN-103489953-BDecember 23, 2015中国科学院半导体研究所一种双步消逝场耦合的雪崩光电探测器
    CN-104681634-AJune 03, 2015北京工业大学一种波导耦合型吸收倍增分离雪崩二极管
    EP-3089224-A4April 26, 2017Huawei Tech Co LtdLawinenphotodiode und herstellungsverfahren dafür
    US-9705023-B2July 11, 2017Huawei Technologies Co., Ltd.Avalanche photodiode and manufacturing method thereof