一种沉积薄膜的方法、面板和显示器

Method for depositing film, panel and display

Abstract

The invention discloses a method for depositing a film, a panel and a display, and the method comprises the following steps: depositing a layer of indium tin oxide film on a substrate surface; controlling silane to output in a first flow, allowing the silane to react with ammonia gas on the indium tin oxide film to form a silicon nitride buffer layer covering the indium tin oxide film; controlling the silane to output in a second flow greater than the first flow, allowing the silane to react with ammonia gas to form a silicon nitride layer which covers the silicon nitride buffer layer. During the first deposition to form the silicon nitride buffer layer, the reaction is not violent, so the reaction between the generated hydrogen and oxygen in an ITO film is difficult, and the atomization phenomenon is slight; during the second deposition to form the silicon nitride cover layer, the generated hydrogen is isolated from the oxygen in the ITO film by the silicon nitride buffer layer, so no atomization phenomenon occurs; the generation of metal precipitates at the interface of the ITO film and the silicon nitride film is also put an end; therefore surface flatness of a device is improved and light transmittance is increased.
本发明公开一种沉积薄膜的方法、面板和显示器,方法包括:在基体表面沉积一层铟锡氧化物薄膜;控制硅烷以第一流量输出,硅烷与氨气在铟锡氧化物薄膜上反应形成覆盖铟锡氧化物薄膜的氮化硅缓冲层;控制硅烷以大于第一流量的第二流量输出,硅烷与氨气反应形成氮化硅层,氧化硅层覆盖于氮化硅缓冲层上。在第一次沉积形成氮化硅缓冲层的过程中反应并不剧烈使得产生的氢与ITO薄膜中的氧发生反应较为困难,雾化现象很轻微;在第二次沉积氮化硅覆盖层过程中,由于产生的氢与ITO薄膜中的氧被氮化硅缓冲层隔绝,因此不会出现雾化现象,ITO薄膜和氮化硅薄膜界面处也能够杜绝出现金属析出物,从而改善了器件的表面平整度以及提高了透光率。

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NO-Patent Citations (1)

    Title
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    CN-105336574-AFebruary 17, 2016无锡华润上华半导体有限公司Manufacturing method for silicon nitride thin film and MIM (metal-isolation-metal) capacitor