基于量子点-量子阱混合结构的锁模半导体激光器

Locked mode semiconductor laser based on quantum dot-quantum well mixed structure

Abstract

The invention provides a locked mode semiconductor laser based on a quantum dot-quantum well mixed structure. The laser is characterized in that a waveguide layer contains a quantum dot-quantum well mixed area. The locked mode semiconductor laser combines the quantum dot serving as a superiority of a saturable absorbing medium and the quantum well serving as a superiority of a high power output gain medium, and achieves a high power short pulse semiconductor laser.
本发明提供一种基于量子点-量子阱混合结构的锁模半导体激光器。该激光器的特征在于波导层含有量子点-量子阱混合区。本发明把量子点作为可饱和吸收介质的优势和量子阱作为高功率输出增益介质的优势相结合,实现高功率短脉冲的半导体激光器。

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